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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFB7446GPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRFB7446GPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFB7446GPbF Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 123 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 87 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain Current 492 PD @TC = 25°C Maximum Power Dissipation 99 W Linear Derating Factor 0.66 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 111 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 236 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.52 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) ––– 2.6 3.3 m VGS = 10V, ID = 70A ––– 3.9 ––– VGS = 6.0V, ID = 35A VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 1.6 ––– Static Drain-to-Source On-Resistance Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50, IAS = 70A, VGS =10V. ISD 70A, di/dt 1174A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, TJ = 25°C, L= 1mH, RG = 50, IAS = 22A, VGS =10V. |
Numéro de pièce similaire - IRFB7446GPBF_15 |
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Description similaire - IRFB7446GPBF_15 |
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