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UF28150J Datasheet(Fiches technique) 1 Page - Tyco Electronics

Numéro de pièce UF28150J
Description  POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
Télécharger  3 Pages
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Fabricant  MACOM [Tyco Electronics]
Site Internet  http://www.macom.com
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UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
28
A
Dissipation @25°C
PD
233
W
Storage Temperature
Tstg
-55 to +150
°C
Junction Temperature
Tj
200
°C
Thermal Resistance
θjc
0.75
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter
Symbol
Min
Max
Units
Test Conditions
Drain-Source Breakdown
Voltage
BVDSS
60
-
V
ID=40 mA, VGS=0.0 V*
Drain-Source Leakage
Current
IDSS
-
4.0
mA
VDS=28.0 V, VGS=0.0 V*
Gate-Source Leakage
Current
IGSS
-
2.0
µA
VGS=20 V, VDS=0.0 V*
Gate Threshold Voltage
VGS(th)
2.0
6.0
V
VDS=10.0 V, IDS=200 mA*
Forward Transconductance
Gm
1.0
-
S
VDS=10.0 V, IDS=2000 mA (pulsed)*
Input Capacitance
CISS
200
pF
VDS=28.0 V, f=1.0 MHz (Reference Only)*
Reverse Capacitance
CRSS
50
pF
VDS=28.0 V, f=1.0 MHz*
Output Capacitance
COSS
14
pF
VDS=28.0 V, f=1.0 MHz*
Power Gain
GP
10
-
dB
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Collector Efficiency
η
50
-
%
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Load Mismatch Tolerance
VSWR
-
3.0:1
-
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
Z in (Ω)
Z load (Ω)
935
4.6 + j8.0
2.3 + j3.1
960
4.7 + j7.8
2.4 + j3.1
M/A-COM POWER TRANSISTORS
1742 CRENSHAW BLVD TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96




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