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IRFB4115PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB4115PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G VDSS 150V RDS(on) typ. 9.3m Ω max. 11m Ω ID (Silicon Limited) 104A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.40 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ij ––– 62 830 380 18 10lbxin (1.1Nxm) A °C 300 -55 to + 175 ± 20 2.5 Max. 104 74 420 IRFB4115PbF GD S Gate Drain Source TO-220AB D S D G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014 Form Quantity IRFB4115PbF TO-220 Tube 50 IRFB4115PbF Base Part Number Package Type Standard Pack Orderable Part Number |
Numéro de pièce similaire - IRFB4115PBF_15 |
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Description similaire - IRFB4115PBF_15 |
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