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IRF9333PBF Fiches technique(PDF) 5 Page - International Rectifier

No de pièce IRF9333PBF
Description  Industry-Standard SO8 Package
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF9333PBF Fiches technique(HTML) 5 Page - International Rectifier

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IRF9333PbF
www.irf.com
5
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 16
. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
D.U.T
*

Fig 17.
Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
2
4
6
8
10
12
14
16
18
20
-VGS, Gate -to -Source Voltage (V)
10
20
30
40
50
60
TJ = 125°C
TJ = 25°C
ID = -9.4A
0
10
20
30
40
50
60
70
-ID, Drain Current (A)
10
20
30
40
50
60
70
80
VGS = -10V
VGS = -4.5V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
60
120
180
240
300
360
420
ID
TOP
-2.1A
-3.0A
BOTTOM -7.5A
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
0
200
400
600
800
1000


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