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IRF9333PBF Fiches technique(PDF) 5 Page - International Rectifier |
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IRF9333PBF Fiches technique(HTML) 5 Page - International Rectifier |
5 / 8 page IRF9333PbF www.irf.com 5 Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current Fig 16 . Typical Power vs. Time * Reverse Polarity of D.U.T for P-Channel P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * Inductor Current Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - + + + - - - RG VDD D.U.T * Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) 10 20 30 40 50 60 TJ = 125°C TJ = 25°C ID = -9.4A 0 10 20 30 40 50 60 70 -ID, Drain Current (A) 10 20 30 40 50 60 70 80 VGS = -10V VGS = -4.5V 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 60 120 180 240 300 360 420 ID TOP -2.1A -3.0A BOTTOM -7.5A 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) 0 200 400 600 800 1000 |
Numéro de pièce similaire - IRF9333PBF_15 |
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Description similaire - IRF9333PBF_15 |
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