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IRF8306MPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF8306MPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 2.7 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.8 2.5 mΩ ––– 2.8 3.6 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -4.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 500 μA ––– ––– 5.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 61 ––– ––– S Qg Total Gate Charge ––– 25 38 Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.0 ––– nC Qgd Gate-to-Drain Charge ––– 6.7 ––– Qgodr Gate Charge Overdrive ––– 8.0 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 9.7 ––– Qoss Output Charge ––– 22 ––– nC RG Gate Resistance ––– 1.3 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 34 ––– ns td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 19 ––– Ciss Input Capacitance ––– 4110 ––– Coss Output Capacitance ––– 970 ––– pF Crss Reverse Transfer Capacitance ––– 340 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 23 (Body Diode) A ISM Pulsed Source Current ––– ––– 180 (Body Diode) Ãg VSD Diode Forward Voltage ––– 0.7 0.75 V trr Reverse Recovery Time ––– 21 32 ns Qrr Reverse Recovery Charge ––– 29 44 nC MOSFET symbol RG = 1.8Ω VDS = 15V, ID = 18A Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 15V VDS = 24V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 6mA VGS = 10V, ID = 23A i VGS = 4.5V, ID = 18A i VDS = VGS, ID = 10mA VDS = VGS, ID = 100μA TJ = 25°C, IF = 18A VGS = 4.5V ID = 18A VGS = 0V VDS = 15V ID = 18A VDD = 15V, VGS = 4.5VÃi di/dt = 300A/μs i TJ = 25°C, IS = 18A, VGS = 0V i showing the integral reverse p-n junction diode. |
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