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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7820PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7820PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7820PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 62.5 78 m VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V VGS(th) Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 5.0 ––– ––– S Qg Total Gate Charge ––– 29 44 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.5 ––– Qgs Gate-to-Source Charge ––– 10.1 ––– Qgd Gate-to-Drain Charge ––– 8.7 ––– See Figs. 6, 16a & 16b Qgodr Gate Charge Overdrive ––– 10.2 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 10.2 ––– Qoss Output Charge ––– 30 ––– nC RG Gate Resistance ––– 0.73 ––– td(on) Turn-On Delay Time ––– 7.1 ––– tr Rise Time ––– 3.2 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1750 ––– Coss Output Capacitance ––– 90 ––– Crss Reverse Transfer Capacitance ––– 25 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 ns Qrr Reverse Recovery Charge ––– 213 320 nC ID = 2.2A VGS = 0V VDS = 100V pF Typ. ––– RG = 1.8 nC ns ––– VDS = 200V, VGS = 0V, TJ = 125°C VDS = VGS, ID = 100μA VDS = 200V, VGS = 0V VGS = 10V VDS = 100V VGS = 20V VGS = -20V VDS = 50V, ID = 2.2A TJ = 25°C, IF = 2.2A, VDD = 100V di/dt = 500A/μs e TJ = 25°C, IS = 2.2A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = 20V, VGS = 0V VDD = 200V, VGS = 10V e ID = 2.2A Conditions See Figs. 15a & 15b Max. 606 2.8 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.2A e μA nA A 1.5 ––– ––– ––– ––– 29 |
Numéro de pièce similaire - IRF7820PBF_15 |
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Description similaire - IRF7820PBF_15 |
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