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DMB54D0UV-13 Fiches technique(PDF) 1 Page - Diodes Incorporated |
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DMB54D0UV-13 Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 7 page DMB54D0UV Document number: DS31676 Rev. 5 - 2 1 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features • N-Channel MOSFET and PNP Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT563 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.006 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMB54D0UV-7 SOT563 3,000/Tape & Reel DMB54D0UV-13 SOT563 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT563 Top View Top View Internal Schematic Bottom View E D 2 S 2 Q 1 G 2 Q 2 B C MB2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) M2 B YM ESD PROTECTED TO 2kV |
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