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IRF7483MPBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF7483MPBF
Description  Brushed Motor drive applications
Download  11 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7483MPBF Fiches technique(HTML) 2 Page - International Rectifier

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IRF7483MTRPbF
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 14, 2015
 
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Absolute Maximum Ratings
  
 
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
135
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
86
A
IDM
Pulsed Drain Current 
540
 
PD @TC = 25°C
Maximum Power Dissipation
74
W
Linear Derating Factor
0.59
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Avalanche Characteristics
  
EAS (Thermally limited)
Single Pulse Avalanche Energy 
69
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
147
IAR
Avalanche Current 
See Fig.15,16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance
  
 
Symbol
Parameter
Typ.
Max.
Units
RJA
Junction-to-Ambient 
–––
60
°C/W
RJA
Junction-to-Ambient 
12.5
–––
RJA
Junction-to-Ambient 
20
–––
RJC
Junction-to-Case 
–––
1.7
RJ-PCB
Junction-to-PCB Mounted
1.0
–––
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
152
Static @ TJ = 25°C (unless otherwise specified)
   
 
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
32
––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.7
2.3
m

VGS = 10V, ID = 81A 
–––
3.4
––– 
VGS = 6.0V, ID = 41A 
VGS(th)
Gate Threshold Voltage
2.2
3.0
3.9
V
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 40V, VGS = 0V
–––
–––
150
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Internal Gate Resistance
–––
1.2
–––
nA
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
 
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)


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