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IRF7463PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7463PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 IRF7463PbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 30V 8m Ω 14A Notes through
are on page 8 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient
––– 50 °C/W Thermal Resistance Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A 10/12/04 l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use Applications PD - 95248 l High Frequency Buck Converters for Computer Processor Power l Lead-Free |
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