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2N3773 Fiches technique(PDF) 1 Page - ON Semiconductor |
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2N3773 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev. 11 1 Publication Order Number: 2N3773/D 2N3773 NPN Power Transistors The 2N3773 is a PowerBase t power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features • High Safe Operating Area (100% Tested) 150 W @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A • For Low Distortion Complementary Designs • This is a Pb−Free Device MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector − Emitter Voltage VCEO 140 Vdc Collector − Emitter Voltage VCEX 160 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage VEBO 7 Vdc Collector Current − Continuous − Peak (Note 2) IC 16 30 Adc Base Current − Continuous − Peak (Note 2) IB 4 15 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 150 0.855 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−204 CASE 1−07 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION http://onsemi.com MARKING DIAGRAM 16 A NPN POWER TRANSISTORS 140 V, 150 W 2N3773G MEX AYYWW A = Assembly Location YY = Year WW = Work Week G = Pb−Free Package |
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