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IRF7321D2PBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF7321D2PBF
Description  Ideal For Buck Regulator Applications
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7321D2PBF Fiches technique(HTML) 2 Page - International Rectifier

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IRF7321D2PbF
2
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
VGS = 0V, ID = -250µA
––– 0.042 0.062
VGS = -10V, ID = -4.9A
ƒ
––– 0.076 0.098
VGS = -4.5V, ID = -3.6A
ƒ
VGS(th)
Gate Threshold Voltage
-1.0 –––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
–––
7.7
–––
S
VDS = -15V, ID = -4.9A
––– ––– -1.0
VDS = -24V, VGS = 0V
––– –––
-25
VDS = -24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
––– –––
100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = 20V
Qg
Total Gate Charge
–––
23
34
ID = -4.9A
Qgs
Gate-to-Source Charge
–––
3.8
5.7
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.9
8.9
VGS = -10V, See Fig. 6
ƒ
td(on)
Turn-On Delay Time
–––
13
19
VDD = -15V
tr
Rise Time
–––
13
20
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
34
51
RG = 6.0Ω
tf
Fall Time
–––
32
48
RD = 15Ω,
ƒ
Ciss
Input Capacitance
––– 710
–––
VGS = 0V
Coss
Output Capacitance
––– 380
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
––– 180
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
IGSS
µA
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) –––
––– -2.5
ISM
Pulsed Source Current (Body Diode)
–––
–––
-30
VSD
Body Diode Forward Voltage
––– -0.78 -1.0
V
TJ = 25°C, IS = -1.7A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) –––
44
66
ns
TJ = 25°C, IF = -1.7A
Qrr
Reverse Recovery Charge
–––
42
63
nC
di/dt = 100A/µs
ƒ
A
MOSFET Source-Drain Ratings and Characteristics
Parameter
Max. Units
Conditions
If (av)
Max. Average Forward Current
3.2
50% Duty Cycle. Rectangular Wave, Tc = 25°C
2.0
See Fig.14
Tc = 70°C
ISM
Max. peak one cycle Non-repetitive
200
5µs sine or 3µs Rect. pulse
Following any rated
Surge current
20
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Maximum Ratings
A
Parameter
Max. Units
Conditions
Vfm
Max. Forward voltage drop
0.57
If = 3.0, Tj = 25°C
0.77
If = 6.0, Tj = 25°C
0.52
If = 3.0, Tj = 125°C
0.79
If = 6.0, Tj = 125°C
.
Irm
Max. Reverse Leakage current
0.30
Vr = 30V
Tj = 25°C
37
Tj = 125°C
Ct
Max. Junction Capacitance
310
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt
Max. Voltage Rate of Charge
4900 V/µs
Rated Vr
Schottky Diode Electrical Specifications
V
mA
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )


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