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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7301PBF Fiches technique(PDF) 7 Page - International Rectifier |
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IRF7301PBF Fiches technique(HTML) 7 Page - International Rectifier |
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7 / 9 page  IRF7301PbF P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - RG VDD • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements * VGS* ** Peak Diode Recovery dv/dt Test Circuit [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 13. For N-Channel HEXFETS |
Numéro de pièce similaire - IRF7301PBF_15 |
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Description similaire - IRF7301PBF_15 |
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