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IRF540NPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF540NPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 9 page IRF540NPbF HEXFET® Power MOSFET 11/3/03 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.15 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 44mΩ ID = 33A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.87 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD - 94812 |
Numéro de pièce similaire - IRF540NPBF_15 |
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Description similaire - IRF540NPBF_15 |
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