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SMB1N-1050 Fiches technique(PDF) 1 Page - Roithner LaserTechnik GmbH

No de pièce SMB1N-1050
Description  infrared high power led
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Fabricant  ROITHNER [Roithner LaserTechnik GmbH]
Site Internet  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1N-1050 Fiches technique(HTML) 1 Page - Roithner LaserTechnik GmbH

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1
SMB1N-1050
v 1.0 03.10.2014
Description
SMB1N-1050 is a surface mount AlGaAsP High Power LED with a typical peak wavelength of 1050 nm
and radiation of 45 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
1000
mW
Forward Current
IF
600
mA
Pulse Forward Current *
1
IFP
2000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
10
K/W
Junction Temperature
TJ
100
°C
Operating Temperature
TCASE
- 40
+ 100
°C
Storage Temperature
TSTG
- 40
+ 100
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by G8370-85
*
2 measured by ANDO Optical Multi Meter AQ2140 & AQ2743
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=500mA
1000
1050
1100
nm
Half Width
∆λ
IF=500mA
50
nm
Forward Voltage
VF
IF=500mA
1.35
1.65
V
VFP
IFP=2A
2.0
3.5
Radiated Power *
1
PO
IF=500mA
45
mW
IFP=2A
120
Radiant Intensity *
2
IE
IF=500mA
20
mW/sr
IFP=2A
50
Viewing Angle
φ
IF=100mA
126
deg.
Rise Time
tR
IF=500mA
160
ns
Fall Time
tF
IF=500mA
170
ns


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