Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

DMG6402LVT Fiches technique(PDF) 2 Page - Diodes Incorporated

No de pièce DMG6402LVT
Description  30V N-CHANNEL ENHANCEMENT MODE MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG6402LVT Fiches technique(HTML) 2 Page - Diodes Incorporated

  DMG6402LVT_15 Datasheet HTML 1Page - Diodes Incorporated DMG6402LVT_15 Datasheet HTML 2Page - Diodes Incorporated DMG6402LVT_15 Datasheet HTML 3Page - Diodes Incorporated DMG6402LVT_15 Datasheet HTML 4Page - Diodes Incorporated DMG6402LVT_15 Datasheet HTML 5Page - Diodes Incorporated DMG6402LVT_15 Datasheet HTML 6Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
DMG6402LVT
Document number: DS35831 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
6.0
4.8
A
t<10s
TA = +25°C
TA = +70°C
ID
7.5
5.9
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
5.0
4.0
A
t<10s
TA = +25°C
TA = +70°C
ID
6
4.8
A
Maximum Body Diode Forward Current (Note 5)
IS
2
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
31
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.75
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RJA
72
°C/W
t<10s
50
Thermal Resistance, Junction to Case (Note 5)
RJC
23
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS


1
μ
A
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
1
1.5
2
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
22
30
m
VGS = 10V, ID = 7A
32
42
VGS = 4.5V, ID = 5.6A
Forward Transfer Admittance
|Yfs|
10
S
VDS = 5V, ID = 7A
Diode Forward Voltage
VSD
0.75
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
498
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
52
Reverse Transfer Capacitance
Crss
45
Gate Resistance
RG

2.4

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
11.4
nC
VGS = 10V, VDS = 15V, ID = 5.8A
Gate-Source Charge
Qgs
1.4
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
tD(on)
3.4
nS
VDD = 15V, VGS = 10V,
RL = 2.6Ω, RG = 3Ω
Turn-On Rise Time
tr
6.2
Turn-Off Delay Time
tD(off)
13.9
Turn-Off Fall Time
tf
2.8
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.


Numéro de pièce similaire - DMG6402LVT_15

FabricantNo de pièceFiches techniqueDescription
logo
Diodes Incorporated
DMG6402LVT-13 DIODES-DMG6402LVT-13 Datasheet
220Kb / 6P
   Low Input Capacitance
More results

Description similaire - DMG6402LVT_15

FabricantNo de pièceFiches techniqueDescription
logo
Zetex Semiconductors
ZXMN3A01F ZETEX-ZXMN3A01F Datasheet
1Mb / 7P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A14F ZETEX-ZXMN3A14F Datasheet
209Kb / 7P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A01E6 ZETEX-ZXMN3A01E6 Datasheet
1Mb / 7P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
logo
WILLAS ELECTRONIC CORP
SE4812LT1 WILLAS-SE4812LT1 Datasheet
428Kb / 4P
   30V N-Channel Enhancement-Mode MOSFET
logo
Diodes Incorporated
ZXM64N03X DIODES-ZXM64N03X Datasheet
337Kb / 7P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
logo
Leshan Radio Company
LN2306LT1G LRC-LN2306LT1G_15 Datasheet
825Kb / 4P
   30V N-Channel Enhancement-Mode MOSFET
logo
Cystech Electonics Corp...
MTNK8S3 CYSTEKEC-MTNK8S3 Datasheet
488Kb / 9P
   30V N-Channel Enhancement Mode MOSFET
logo
Pan Jit International I...
PJS50N03 PANJIT-PJS50N03 Datasheet
227Kb / 6P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
logo
Cystech Electonics Corp...
MTN3K01N3 CYSTEKEC-MTN3K01N3 Datasheet
319Kb / 8P
   30V N-CHANNEL Enhancement Mode MOSFET
logo
Pan Jit International I...
PJ4812 PANJIT-PJ4812_09 Datasheet
379Kb / 5P
   30V N-Channel Enhancement Mode MOSFET
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com