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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DMG301NU-13 Fiches technique(PDF) 2 Page - Diodes Incorporated |
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DMG301NU-13 Fiches technique(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMG301NU Document number: DS36226 Rev. 3 - 2 2 of 6 www.diodes.com September 2014 © Diodes Incorporated DMG301NU Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS 8 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 0.26 0.21 A Continuous Drain Current (Note 6) VGS = 2.7V Steady State TA = +25°C TA = +70°C ID 0.23 0.18 A Pulsed Drain Current ( 10μs pulse, duty cycle = 1%) IDM 1.5 A Maximum Body Diode Continuous Current (Note 6) IS 0.5 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.32 W (Note 6) 0.4 Thermal Resistance, Junction to Ambient (Note 5) RθJA 369 °C/W (Note 6) 296 Thermal Resistance, Junction to Case (Note 6) RθJC 115 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 25 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 20V, VGS = 0V Gate-Body Leakage IGSS 100 nA VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.7 1.1 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 4 Ω VGS = 4.5V, ID = 0.4A 5 Ω VGS = 2.7V, ID = 0.2A Forward Transconductance gFS 1 S VDS = 5V, ID = 0.4A Diode Forward Voltage VSD 0.76 1.2 V VGS = 0V, IS = 0.29A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 27.9 42 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 6.1 9.2 Reverse Transfer Capacitance Crss 2.0 3.0 Gate Resistance RG 26.4 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 0.36 nC VGS = 4.5V, VDS = 5V, ID = 0.2A Gate-Source Charge Qgs 0.06 Gate-Drain Charge Qgd 0.04 Turn-On Delay Time tD(on) 2.9 nS VGS = 4.5V, VDS = 6V ID = 0.5A, RG = 50Ω Turn-On Rise Time tr 1.8 Turn-Off Delay Time tD(off) 6.6 Turn-Off Fall Time tf 2.3 Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Numéro de pièce similaire - DMG301NU-13 |
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Description similaire - DMG301NU-13 |
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