STUD45N01 datasheet(1/10 Pages) SAMHOP

No de pièce	STUD45N01

Description	Super high dense cell design for low RDS(ON).

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

100

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

100V

40A

18

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-252 and TO-251 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

www.samhop.com.tw

Aug,05,2013

1

Details are subject to change without notice.

TC=25°C

G

S

STU SERIES

TO - 252AA( D- PAK )

STD SERIES

TO - 251( I - PAK )

W

PD

°C

-55 to 175

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

2.5

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=70°C

A

TC=70°C

W

40

117

60

33.5

42

Ver 1.0

STU45N01

STD45N01

Green

Product

EAS

mJ

Single Pulse Avalanche Energy

d

306

a e

G

S

D

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STUD45N01 Fiches technique(PDF) 1 Page - SamHop Microelectronics Corp.

STUD45N01 Fiches technique(HTML) 1 Page - SamHop Microelectronics Corp.

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