STUD10N20 datasheet(3/10 Pages) SAMHOP

No de pièce	STUD10N20

Description	Super high dense cell design for low RDS(ON).

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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STU10N20

STD10N20

Ver 1.0

www.samhop.com.tw

Aug,14,2014

3

Tj( °

C)

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

15

9

6

0

2

4

6

8

10

12

VGS=10V

8.0

6.4

4.8

3.2

1.6

0

1

6

5

4

3

2

Tj=125 C

-55 C

25 C

900

750

600

450

300

150

2.5

2.2

1.9

1.6

1.3

1.0

0

100

75

25

50

125

150

V GS =10V

ID=4A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

75

50

25

0

-25

-50

V DS =V GS

ID=250uA

1.3

1.2

1.1

1.0

0.9

0.8

0.7

125 150

100

75

50

25

0

-25

-50

ID=10mA

3

V GS =10V

0.1

3

6

912

15

0

12

V GS =4.5V

ID=3.9A

VGS=4V

0

VGS=3.5V

VGS=4.5V

Numéro de pièce similaire - STUD10N20

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STUD10N20 Fiches technique(PDF) 3 Page - SamHop Microelectronics Corp.

STUD10N20 Fiches technique(HTML) 3 Page - SamHop Microelectronics Corp.

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