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STU630S Fiches technique(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU630S Fiches technique(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page SamHop Microelectronics Corp. Symbol VDS VGS IDM A ID Units Parameter 60 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 60V 46A 18 @ VGS=4.5V 10 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A www.samhop.com.tw Jan,18,2013 1 Details are subject to change without notice. TC=25°C G S D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) W PD °C -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 3 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Single Pulse Avalanche Energy c TC=70°C W 210 46 134 42 36.8 27 Ver 1.0 STU/D630S Green Product a |
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