STP35N10 datasheet(1/8 Pages) SAMHOP

No de pièce	STP35N10

Description	Super high dense cell design for extremely low RDS(ON).

Download	8 Pages

Scroll/Zoom	100%

Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

Logo

1 / 8 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

2

62.5

W

A

PD

°C

75

-55 to 175

ID

Units

Parameter

100

35

103

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

100V

35A

30 @ VGS=10V

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 package.

STP S ER IE S

TO-220

S

D

G

S

G

D

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

TC=25°C

-Pulsed

a

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

www.samhop.com.tw

Apr,22,2014

1

Details are subject to change without notice.

A

29.3

TC=70°C

52.5

W

STP35N10

Ver 1.1

Green

Product

Numéro de pièce similaire - STP35N10

Fabricant	No de pièce	Fiches technique	Description
SHENZHEN DOINGTER SEMIC...	STP35N10	948Kb / 3P	N-Channel MOSFET uses advanced trench technology

More results

Description similaire - STP35N10

Fabricant	No de pièce	Fiches technique	Description
SamHop Microelectronics...	STBP438S	267Kb / 8P	Super high dense cell design for extremely low RDS(ON)
	STBP438A	262Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP60L60	261Kb / 8P	Super high dense cell design for extremely low RDS(ON).
First Components Intern...	FMT2305	400Kb / 4P	Super High Dense Cell Design for Extremely Low RDS(ON)
SamHop Microelectronics...	STBP70L60	181Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP454	182Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP4410	195Kb / 10P	Super high dense cell design for extremely low RDS(ON).
	STBP440S	264Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STBP432S	243Kb / 8P	Super high dense cell design for extremely low RDS(ON).
	STP652F	126Kb / 7P	Super high dense cell design for extremely low RDS(ON).

More results

STP35N10 Fiches technique(PDF) 1 Page - SamHop Microelectronics Corp.

STP35N10 Fiches technique(HTML) 1 Page - SamHop Microelectronics Corp.

Numéro de pièce similaire - STP35N10

Description similaire - STP35N10

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL