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STK103 Fiches technique(PDF) 1 Page - SamHop Microelectronics Corp. |
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STK103 Fiches technique(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a Symbol VDS VGS IDM W A PD °C 1.25 -55 to 150 ID Units Parameter 100 2.0 11 V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG www.samhop.com.tw Jul,13,2011 1 Details are subject to change without notice. TA=25°C A 100 °C/W Thermal Resistance, Junction-to-Ambient R JA D G D S SOT-89 TA=70°C A 1.6 TA=70°C W 0.8 EAS mJ Single Pulse Avalanche Energy d 20 STK103 Gre rr P Pr P P o rr PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 100V 2.0A 312 @ VGS=4.5V 210 @ VGS=10V S G D Suface Mount Package. FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Ver 1.1 |
Numéro de pièce similaire - STK103 |
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Description similaire - STK103 |
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