FMMT555_15 datasheet(1/2 Pages) DIODES

No de pièce	FMMT555

Description	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Fabricant	DIODES [Diodes Incorporated]

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – AUGUST 2003

FEATURES

*

150 Volt V

CEO

*

1 Amp continuous current

COMPLEMENTARY TYPE –

FMMT455

PARTMARKING DETAIL –

555

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-160

V

Collector-Emitter Voltage

VCEO

-150

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

I

B

-200

mA

Power Dissipation at Tamb = 25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-160

V

IC=-100 A

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-150

V

IC=-10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-100 A

Collector Cut-Off Current

ICBO

-0.1

-10

A

VCB =-140V

VCB =-140V, Tamb=100°C

Emitter Cut-Off Current

IEBO

-0.1

A

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.3

V

IC=-100mA, IB=-10mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1

V

IC=-100mA, IB=-10mA*

Base-Emitter

Turn-on Voltage

VBE(on)

-1

V

IC=-100mA, VCE =-10V*

Static Forward Current

Transfer Ratio

hFE

50

300

IC=-10mA, VCE =-10V*

IC=-300mA, VCE =-10V*

Transition Frequency

fT

100

MHz

IC=-50mA, VCE =-10V

f=100MHz

Output Capacitance

Cobo

10

pF

VCB =-10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

Spice parameter data is available upon request for this device

FMMT555

C

B

E

SOT23

3 - 131

3 - 132

FMMT555

TYPICAL CHARACTERISTICS

VCE(sat) vIC

IC - Collector Current (Amps)

hFE vIC

VBE(sat) vIC

IC - Collector Current (Amps)

VBE(on) vIC

Single Pulse Test at Tamb=25°C

20

40

60

80

100

0

-1

-0.2

-0.4

-0.6

-0.8

Switching Speeds

IC - Collector Current (Amps)

-0.0001

-0.001

-0.01

-0.1

IC/IB=10

VCE=-10V

-0.0001

-0.001

1

-0.01

-0.1

3

2

1

4

5

-0.1

-1

0

IB1=IB2=IC/10

-0.01

ZTX554/55-2

ts

tf

td

tr

ts

µs

tr

ns

300

200

100

400

500

0

tf

ns

600

400

200

800

1000

0

td

ns

100

50

0

-0.6

-0.0001

-0.001

-1

-0.01

-0.1

-0.8

-1.0

-1.2

-1.4

-0.6

-1

-0.0001

-0.001

-0.01

-0.1

IC/IB=10

-1.0

-1.2

-1.4

-0.8

0

VCE=-10V

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10V

100V

1s

DC

100ms

10ms

100

s

1ms

1V

0.01

0.001

0.1V

10

1000V

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