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STF443 Fiches technique(PDF) 1 Page - SamHop Microelectronics Corp. |
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STF443 Fiches technique(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 6 page Suface Mount Package. S mHop Microelectronics C orp. a STF443 Symbol VDS VGS IDM 75 W A PD °C 1.67 -55 to 150 ID Units Parameter -20 -4.5 -23 °C/W V V ±10 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -20V -4.5A 48 @ VGS=-4.0V 47 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw Apr,26,2013 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. -3.6 1.07 56 @ VGS=-3.1V 64 @ VGS=-2.5V 50 @ VGS=-3.7V P-Channel Enhancement Mode Field Effect Transistor S G D d T DF N 2X 2 P IN 1 S D D D D G |
Numéro de pièce similaire - STF443 |
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Description similaire - STF443 |
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