STC3116E datasheet(2/7 Pages) SAMHOP

No de pièce	STC3116E

Description	Super high dense cell design for low RDS(ON).

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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STC3116E

www.samhop.com.tw

Jun,14,2012

2

VGS=±12V,VDS=0V

VGS=0V,IS= 1.0A

0.82

30

1

±10

0.5

6.5

396

56

33

46

77

413

48

3.8

0.6

1.3

VDS=15V,VGS=0V

VDD=15V

ID=1A

VGS=10V

RGEN=6ohm

VDS=5V , ID=1.0A

VDS=24V , VGS=0V

VGS=0V,ID=250uA

0.9

1.5

Symbol

Min

Typ

Max

Units

BVDSS

V

IGSS

uA

VGS(th)

V

gFS

S

VSD

CISS

pF

COSS

pF

CRSS

pF

Qg

nC

Qgs

nC

Qgd

tD(ON)

ns

tr

ns

tD(OFF)

ns

tf

ns

Gate-Drain Charge

SWITCHING CHARACTERISTICS

Gate-Source Charge

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=15V,ID=1.0A,VGS=10V

Fall Time

Turn-On Delay Time

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

Reverse Transfer Capacitance

ON CHARACTERISTICS

c

VDS=15V,ID=1.0A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

1.2

V

Notes

_

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

f=1.0MHz

VDS=VGS ,ID=250uA

Ver 1.0

103

VGS=2.5V , ID=0.8A

139

m ohm

75

VGS=10V , ID=1.0A

94

m ohm

82

VGS=4.5V , ID=0.9A

107

m ohm

RDS(ON)

Drain-Source On-State Resistance

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