CBAT54

CBAT54A

CBAT54C

CBAT54S

SURFACE MOUNT

SILICON SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBAT54 Series

types are Silicon Schottky Diodes in an SOT-23

Surface Mount Package.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

30

V

Continuous Forward Current

IF

200

mA

Peak Repetitive Forward Current

IFRM

300

mA

Forward Surge Current, tp=10ms

IFSM

600

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MAX

UNITS

IR

VR=25V

2.0

μA

VF

IF=0.1mA

240

mV

VF

IF=1.0mA

320

mV

VF

IF=10mA

400

mV

VF

IF=30mA

500

mV

VF

IF=100mA

800

mV

Cd

VR=1.0V, f=1.0MHz

10

pF

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

5.0

ns

CBAT54:

SINGLE

MARKING CODE: CL4

CBAT54A: DUAL, COMMON ANODE

MARKING CODE: CL42

CBAT54C: DUAL, COMMON CATHODE

MARKING CODE: CL43

CBAT54S: DUAL, IN SERIES

MARKING CODE: CL44

SOT-23 CASE

R1 (20-November 2009)

www.centra lsemi.com