BC846AS_15 datasheet(1/3 Pages) DIODES

No de pièce	BC846AS

Description	DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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Fabricant	DIODES [Diodes Incorporated]

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BC846AS

DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

•

Ideally Suited for Automatic Insertion

•

For Switching and AF Amplifier Applications

•

Complementary PNP Type Available (BC856AS)

•

Lead Free/RoHS Compliant (Note 1)

•

"Green" Device (Note 4 and 5)

Mechanical Data

•

Case: SOT-363

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Terminal Connections: See Diagram

•

Marking Information: See Page 3

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.006 grams (approximate)

SOT-363

Dim

Min

Max

A

0.10

0.30

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

F

0.30

0.40

H

1.80

2.20

J

⎯

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.25

α

0

°

8°

All Dimensions in mm

C

1

65

4

3

2

1

B

2

E

2

E

1

B

1

C

2

A

M

J

L

D

B C

H

K

F

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

65

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Emitter Current

IEM

200

mA

Power Dissipation

(Note 2)

Pd

200

mW

Thermal Resistance, Junction to Ambient

(Note 2)

RθJA

625

°C/W

Operating and Storage Temperature Range

Tj, Tstg

-65 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

(Note 3) V(BR)CBO

80

—

V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage

(Note 3) V(BR)CEO

65

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

(Note 3) V(BR)EBO

6

—

V

IE = 1μA, IC = 0

DC Current Gain

(Note 3)

hFE

110

—

220

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage

(Note 3)

VCE(SAT)

—

90

200

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage

(Note 3)

VBE(SAT)

—

700

900

—

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage

(Note 3)

VBE(ON)

580

—

660

—

700

770

mV

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Cutoff Current

(Note 3)

ICES

ICBO

—

15

5.0

nA

µA

VCE = 80V

VCB = 40V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCB

—

2.0

—

pF

VCB = 10V, f = 1.0MHz

Notes:

1. No purposefully added lead.

2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on

our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

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