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TS13005CZC0G Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce TS13005CZC0G
Description  High Voltage NPN Transistor
Download  6 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS13005CZC0G Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TS13005
High Voltage NPN Transistor
2/6
Version: D13
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE =0.1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
--
250
uA
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 9V, IC =0
IEBO
--
--
1
mA
Collector-Emitter Saturation Voltage
IC=1A, IB =0.2A
IC=2A, IB =0.5A
IC=4A, IB =1A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
--
--
--
0.5
0.6
1
V
Base-Emitter Saturation Voltage
IC=1A, IB =0.2A
IC=2A, IB =0.5A
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1.2
1.6
V
DC Current Gain
VCE =5V, IC = 1A
VCE =5V, IC = 2A
hFE
15
8
--
--
32
40
Dynamic
Frequency
VCE =10V, IC =0.5A
fT
4
--
--
MHz
Output Capacitance
VCB =10V, f =0.1MHz
Cob
--
65
--
pF
Resistive Load
Turn On Time
VCC =125V, IC =2A,
IB1 =IB2=0.4A, tP =25uS
Duty Cycle ≤1%
tON
--
0.3
0.7
uS
Storage Time
tSTG
--
2.2
3
uS
Fall Time
tf
--
0.3
0.5
uS
Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%


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