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ST1230C14K1P Fiches technique(PDF) 6 Page - Vishay Siliconix |
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ST1230C14K1P Fiches technique(HTML) 6 Page - Vishay Siliconix |
6 / 9 page VS-ST1230C..K Series www.vishay.com Vishay Semiconductors Revision: 16-Dec-13 6 Document Number: 94395 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Instantaneous Gate Current (A) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) (1) (2) (3) (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms a) Recommended load line for b) Recommended load line for <=30% rated di/dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/dt : 20V, 10ohms; tr<=1 µs tr<=1 µs Device: ST1230C..K Series Rectangular gate pulse - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 9 8 - Critical dV/dt: 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - K = PUK case A-24 (K-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) Device code 5 1 3 2 4 6 7 8 9 ST VS- 123 0 C 16 K 1 - 1 - Vishay Semiconductors product LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 |
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