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SMAJ36A Fiches technique(PDF) 5 Page - Taiwan Semiconductor Company, Ltd |
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SMAJ36A Fiches technique(HTML) 5 Page - Taiwan Semiconductor Company, Ltd |
5 / 7 page CREAT BY ART Test Maximum Current Reverse Leakage IT @ VWM Min Max (mA) ID (μA) SMAJ160 SN 160 178 218 1 287 1.0 1 SMAJ160A SP 160 178 197 1 259 1.2 1 SMAJ170 SQ 170 189 231 1 304 1.0 1 SMAJ170A SR 170 189 209 1 275 1.1 1 SMAJ188 ST 188 209 255 1 344 0.9 1 SMAJ188A SS 188 209 231 1 328 0.9 1 Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2 2. Mounted on 5 x 5mm copper pads to each terminal 3. Lead temperature at TL=75°C 4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum 5. Peak pulse power waveform is 10/1000 μs 6. For Bi-Directional devices having VR of 10 volts and under, the IR limit is double. Document Number: DS_D1411078 Version: N15 SMAJ SERIES Taiwan Semiconductor Device Device Marking Code Working Peak Reverse Voltage VWM (V) Breakdown Voltage Maximum Clamping Voltage at IPPM Vc (V) (Note5) Maximum Peak Pulse Surge Current IPPM (A) (Note5) VBR (V) at IT |
Numéro de pièce similaire - SMAJ36A |
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Description similaire - SMAJ36A |
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