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2SC4703 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SC4703
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4703 Fiches technique(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10339EJ01V1DS
2
2SC4703
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
1.5
µA
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
1.5
µA
DC Current Gain
hFE
Note 1
VCE = 5 V, IC = 50 mA
50
250
RF Characteristics
Gain Bandwidth Product
fT
VCE = 5 V, IC = 50 mA
6.0
GHz
Insertion Power Gain (1)
S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz
6.5
8.3
dB
Insertion Power Gain (2)
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
8.5
dB
Noise Figure
NF
VCE = 5 V, IC = 50 mA, f = 1 GHz
2.3
3.5
dB
Collector Capacitance
Cob
Note 2
VCB = 5 V, IE = 0 mA, f = 1 MHz
1.5
2.5
pF
2nd Order Intermoduration Distortion
IM2
VCE = 5 V
55
dBc
IC = 50 mA,
VO = 105 dB
µV/75 Ω,
f = 190
− 90 MHz
VCE = 10 V
63
3rd Order Intermoduration Distortion
IM3
VCE = 5 V
76
dBc
IC = 50 mA,
VO = 105 dB
µV/75 Ω,
f = 2
× 190 − 200 MHz
VCE = 10 V
81
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
SH
SF
SE
Marking
SH
SF
SE
hFE Value
50 to 100
80 to 160
125 to 250


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