2SJ607_15 datasheet(5/10 Pages) RENESAS

No de pièce	2SJ607

Description	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D14655EJ3V0DS

3

2SJ607

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

Tch - Channel Temperature - ˚C

040

20

60

100

140

80

120

160

100

80

60

40

20

0

TC - Case Temperature - ˚C

0

80

20

40

60

100

140

120

160

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

200

160

120

80

40

0

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

−10

−100

−1000

−0.1

−1

−10

TC = 25˚C

Single Pulse

−1

−100

Power

Dissipation

Limited

R

DS(on)

LimitedID(DC)

ID(pulse)

PW

=

10

µ

s

100

µ

s

1 ms

10

ms

DC

PW - Pulse Width - s

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

10

0.01

0.1

1

100

1000

1 m

10 m

100 m

1

10

100

1000

Single Pulse

Rth(ch-C) = 0.78˚C/W

10

µ

100

µ

Rth(ch-A) = 83.3˚C/W

Numéro de pièce similaire - 2SJ607_15

Fabricant	No de pièce	Fiches technique	Description
NEC	2SJ607-S	78Kb / 8P	MOS FIELD EFFECT TRANSISTOR
Renesas Technology Corp	2SJ607-S	213Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2001
NEC	2SJ607-Z	78Kb / 8P	MOS FIELD EFFECT TRANSISTOR
Renesas Technology Corp	2SJ607-Z	213Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2001
NEC	2SJ607-ZJ	78Kb / 8P	MOS FIELD EFFECT TRANSISTOR

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Description similaire - 2SJ607_15

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Renesas Technology Corp	NP180N04TUK	253Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	2SK3353	224Kb / 10P	MOS FIELD EFFECT TRANSISTOR
	NP60N04VUK	110Kb / 8P	MOS FIELD EFFECT TRANSISTOR
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	NP90N04VUK	111Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP160N04TUK	235Kb / 8P	MOS FIELD EFFECT TRANSISTOR
	NP160N055TUK	112Kb / 8P	MOS FIELD EFFECT TRANSISTOR

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2SJ607 Fiches technique(PDF) 5 Page - Renesas Technology Corp

2SJ607 Fiches technique(HTML) 5 Page - Renesas Technology Corp

Numéro de pièce similaire - 2SJ607_15

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