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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SJ603 Fiches technique(PDF) 4 Page - Renesas Technology Corp |
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2SJ603 Fiches technique(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page  Data Sheet D14648EJ3V0DS 2 2SJ603 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −60 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m 20 V, VDS = 0 V m 10 µA Gate Cut-off Voltage VGS(off) VDS = −10 V, ID = −1 mA −1.5 −2.0 −2.5 V Forward Transfer Admittance | yfs |VDS = −10 V, ID = −13 A 10 21 S Drain to Source On-state Resistance RDS(on)1 VGS = −10 V, ID = −13 A 38 48 m Ω RDS(on)2 VGS = −4.0 V, ID = −13 A 53 75 m Ω Input Capacitance Ciss VDS = −10 V 1900 pF Output Capacitance Coss VGS = 0 V 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) VDD = −30 V, ID = −13 A 10 ns Rise Time tr VGS = −10 V 11 ns Turn-off Delay Time td(off) RG = 0 Ω 66 ns Fall Time tf 20 ns Total Gate Charge QG VDD = −48 V 38 nC Gate to Source Charge QGS VGS = −10 V 7 nC Gate to Drain Charge QGD ID = −25 A 10 nC Body Diode Forward Voltage VF(S-D) IF = 25 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 25 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 100 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = −20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS ( −) D.U.T. RL VDD τ = 1 s µ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS ( −) 10% 90% 10% 0 VDS ( −) 90% 90% td(on) tr td(off) tf 10% τ VDS 0 ton toff PG. 50 Ω D.U.T. RL VDD IG = −2 mA − VGS |
Numéro de pièce similaire - 2SJ603_15 |
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Description similaire - 2SJ603_15 |
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