SI4435DY datasheet(1/8 Pages) IRF

No de pièce	SI4435DY

Description	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

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Fabricant	IRF [International Rectifier]

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Parameter

Max.

Units

VDS

Drain- Source Voltage

-30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -10V

-8.0

ID @ TA= 70°C

Continuous Drain Current, VGS @ -10V

-6.4

A

IDM

Pulsed Drain Current

-50

PD @TA = 25°C

Power Dissipation

2.5

PD @TA = 70°C

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

10/14/99

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

50

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

Si4435DY

HEXFET® Power MOSFET

These P-channel HEXFET® Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance per

silicon area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

VDSS = -30V

RDS(on) = 0.020Ω

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

PD- 93768A

Top View

8

1

2

3

4

5

6

7

D

G

S

A

D

S

SO-8

Numéro de pièce similaire - SI4435DY

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	SI4435DY	93Kb / 5P	30V P-Channel PowerTrench MOSFET
Guangdong Kexin Industr...	SI4435DY	490Kb / 2P	P-Channel MOSFET
Guangdong Kexin Industr...	SI4435DY-HF	523Kb / 2P	P-Channel MOSFET
VBsemi Electronics Co.,...	SI4435DY-T1-E3	1,001Kb / 9P	P-Channel 30-V (D-S) MOSFET
International Rectifier	SI4435DYPBF	107Kb / 8P	HEXFET Power MOSFET

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Description similaire - SI4435DY

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRF7663	77Kb / 7P	Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
	IRFP044N	105Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)
	IRFIZ46N	104Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A)
	IRF7416	116Kb / 9P	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
	IRF7503	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
	IRF7603	113Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
	IRF5800	98Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)
	IRF7606	102Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
	IRF9410	114Kb / 7P	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

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SI4435DY Fiches technique(PDF) 1 Page - International Rectifier

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