IRLML5103 datasheet(1/9 Pages) IRF

No de pièce	IRLML5103

Description	Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

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Fabricant	IRF [International Rectifier]

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PD - 91260E

HEXFET® Power MOSFET

VDSS = -30V

RDS(on) = 0.60Ω

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This

package, dubbed the Micro3, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards.

IRLML5103

04/29/03

Description

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Generation V Technology

l

Ultra Low On-Resistance

l

P-Channel MOSFET

l

SOT-23 Footprint

l

Low Profile (<1.1mm)

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Available in Tape and Reel

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Fast Switching

S

D

G

Micro3

Parameter

Max.

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ -10V

-0.76

ID @ TA = 70°C

Continuous Drain Current, VGS @ -10V

-0.61

A

IDM

Pulsed Drain Current

-4.8

PD@TA = 25°C

Power Dissipation

540

mW

Linear Derating Factor

4.3

mW/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

230

Thermal Resistance

°C/W

Numéro de pièce similaire - IRLML5103

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRLML5103	81Kb / 8P	HEXFET Power MOSFET
GUANGDONG HOTTECH INDUS...	IRLML5103	550Kb / 4P	Power MOSFET
Guangdong Youtai Semico...	IRLML5103	428Kb / 6P	Generation VTechnology
International Rectifier	IRLML5103GPBF	242Kb / 8P	HEXFET POWER MOSFET
International Rectifier	IRLML5103GTRPBF	223Kb / 8P	Generation V Technology

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Description similaire - IRLML5103

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	C50IRF	164Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
	IRFPC50LC	333Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
	IRFR9120	173Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)
	IRFD9120	173Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
	448IRF	168Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.60ohm, Id=11A)
	IRF7416	116Kb / 9P	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
	IRF7503	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
	IRF7603	113Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
	SI4435DY	82Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

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IRLML5103 Fiches technique(PDF) 1 Page - International Rectifier

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