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IRL3103D1 Fiches technique(PDF) 2 Page - International Rectifier |
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IRL3103D1 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 6 page IRL3103D1 Parameter Min. Typ. Max. Units Conditions IF (AV) ( Schottky) MOSFET symbol showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction and Schottky diode. VSD1 Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V VSD2 Diode Forward Voltage ––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 32A Qrr Reverse Recovery Charge ––– 49 73 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Uses IRL3103 data and test conditions Body Diode & Schottky Diode Ratings and Characteristics 2.0 220 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.014 VGS = 10V, ID = 34A ––– ––– 0.019 Ω VGS = 4.5V, ID = 28A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 32A ––– ––– 0.10 mA VDS = 30V, VGS = 0V ––– ––– 22 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 43 ID = 32A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 15V tr Rise Time ––– 210 ––– ns ID = 32A td(off) Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS =4.5V tf Fall Time ––– 54 ––– RD = 0.43 Ω, Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1900 ––– VGS = 0V Coss Output Capacitance ––– 810 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5 Ciss Input Capacitance ––– 3500 ––– VGS = 0V, VDS = 0V MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance nH pF ––– ––– G D S LS Internal Source Inductance 7.5 ––– ––– 4.5 S D G |
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