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IRL3103D1 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRL3103D1
Description  FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRL3103D1 Fiches technique(HTML) 2 Page - International Rectifier

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IRL3103D1
Parameter
Min. Typ. Max. Units
Conditions
IF (AV)
( Schottky)
MOSFET symbol
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction and Schottky diode.
VSD1
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 32A, VGS = 0V
‚
VSD2
Diode Forward Voltage
–––
–––
0.50
V
TJ = 25°C, IS = 1.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
51
77
ns
TJ = 25°C, IF = 32A
Qrr
Reverse Recovery Charge
–––
49
73
nC
di/dt = 100A/µs
‚
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Notes:
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ Uses IRL3103 data and test conditions
Body Diode & Schottky Diode Ratings and Characteristics
2.0
220
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.037 –––
V/°C
Reference to 25°C, ID = 1mA
„
–––
––– 0.014
VGS = 10V, ID = 34A
‚
–––
––– 0.019
VGS = 4.5V, ID = 28A
‚
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
23
–––
–––
S
VDS = 25V, ID = 32A
ƒ
–––
–––
0.10
mA
VDS = 30V, VGS = 0V
–––
–––
22
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
43
ID = 32A
Qgs
Gate-to-Source Charge
–––
–––
14
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
23
VGS = 4.5V, See Fig. 6
‚
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 15V
tr
Rise Time
–––
210
–––
ns
ID = 32A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 3.4Ω, VGS =4.5V
tf
Fall Time
–––
54
–––
RD = 0.43 Ω,
‚ƒ
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1900 –––
VGS = 0V
Coss
Output Capacitance
–––
810
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
240
–––
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
–––
3500 –––
VGS = 0V, VDS = 0V
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
nH
pF
–––
–––
G
D
S
LS
Internal Source Inductance
7.5
–––
–––
4.5
S
D
G


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