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2SJ248 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SJ248
Description  Silicon P Channel MOS FET
Download  9 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ248 Fiches technique(HTML) 4 Page - Renesas Technology Corp

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2SJ248
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
Drain peak current
ID (pulse)
Note 1
–32
A
Body to drain diode reverse drain current
IDR
–8
A
Channel dissipation
Pch
Note 2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–100
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
–250
µA
VDS = –80 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
0.25
0.3
ID = –4 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
0.3
0.45
ID = –4 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
3.0
5.5
S
ID = –4 A, VDS = –10 V
Note 3
Input capacitance
Ciss
880
pF
Output capacitance
Coss
325
pF
Reverse transfer capacitance
Crss
80
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
12
ns
Rise time
tr
47
ns
Turn-off delay time
td (off)
150
ns
Fall time
tf
75
ns
ID = –4 A
VGS = –10 V
RL = 2
Body to drain diode forward voltage
VDF
–1.0
V
IF = –8 A, VGS = 0
Body to drain diode reverse recovery time
trr
170
ns
IF = –8 A, VGS = 0
diF/dt = 50 A/
µs
Note:
3. Pulse test


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