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2SC3356-T1B Fiches technique(PDF) 1 Page - Renesas Technology Corp |
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2SC3356-T1B Fiches technique(HTML) 1 Page - Renesas Technology Corp |
1 / 9 page R09DS0021EJ0300 Rev.3.00 Page 1 of 7 Jun 28, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. PreliminaryData Sheet 2SC3356 NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form 2SC3356 2SC3356-A 50 pcs (Non reel) • 8 mm wide embossed taping 2SC3356-T1B 2SC3356-T1B-A 3-pin Minimold (Pb-Free) 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0021EJ0300 Rev.3.00 Jun 28, 2011 <R> |
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