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2SC3356-T1B Fiches technique(PDF) 1 Page - Renesas Technology Corp

No de pièce 2SC3356-T1B
Description  NPN Silicon RF Transistor
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3356-T1B Fiches technique(HTML) 1 Page - Renesas Technology Corp

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R09DS0021EJ0300 Rev.3.00
Page 1 of 7
Jun 28, 2011
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PreliminaryData Sheet
2SC3356
NPN Silicon RF Transistor
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
2SC3356
2SC3356-A
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC3356-T1B
2SC3356-T1B-A
3-pin Minimold
(Pb-Free)
3 kpcs/reel
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0021EJ0300
Rev.3.00
Jun 28, 2011
<R>


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