Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼
Nom de la pièce
         Description


IRFR1205 Datasheet(Fiches technique) 1 Page - International Rectifier

Numéro de pièce IRFR1205
Description  Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A⑤)
Télécharger  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo 

 
 1 page
background image
IRFR/U1205
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.027Ω
ID = 44A…
Description
5/11/98
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
44
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
…
A
IDM
Pulsed Drain Current
‡
160
PD @TC = 25°C
Power Dissipation
107
W
Linear Derating Factor
0.71
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚‡
210
mJ
IAR
Avalanche Current
‡
25
A
EAR
Repetitive Avalanche Energy
‡
11
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
TO -25 1A A
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91318B
www.irf.com
1




Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download



Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
SHD225701LOW RDS HERMETIC POWER MOSFET - N-CHANNEL 1 2 Sensitron
IRFZ24NPower MOSFET Vdss=55V Rds on =0.07ohm Id=17A 1 2 3 4 5 MoreInternational Rectifier
SHD244702LOW RDS HERMETIC POWER MOSFET - P-CHANNEL 1 2 3 Sensitron
SBF50P10-023LRAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL 1 2 3 Sensitron
SHD224701LOW RDS HERMETIC POWER MOSFET - N-CHANNEL 1 2 Sensitron
STRM6511OFF-LINE SWITCHING REGULATOR WITH POWER MOSFET OUTPUT 1 2 3 4 5 MoreAllegro MicroSystems
MMDF3207DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS 1 2 3 4 Motorola, Inc
MMSF3205SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS 1 2 3 4 5 MoreMotorola, Inc
MRF154N-CHANNEL BROADBAND RF POWER MOSFET 1 2 3 4 5 MoreMotorola, Inc
IRLML6402TRHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

Lien URL

AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Favoris   |   Echange de liens   |   Fabricants
All Rights Reserved © Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl