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IRFB9N60 Fiches technique(PDF) 2 Page - International Rectifier |
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IRFB9N60 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 8 page IRFB9N60A 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.75 Ω VGS = 10V, ID = 5.5A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.5 ––– ––– S VDS = 25V, ID = 5.5A ––– ––– 25 µA VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Qg Total Gate Charge ––– ––– 49 ID = 9.2A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 300V tr Rise Time ––– 25 ––– ID = 9.2A td(off) Turn-Off Delay Time ––– 30 ––– RG = 9.1Ω tf Fall Time ––– 22 ––– RD = 35.5Ω,See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1400 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 1957 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 49 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 96 ––– VGS = 0V, VDS = 0V to 480V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 6.8mH RG = 25Ω, IAS = 9.2A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V trr Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 9.2A Qrr Reverse RecoveryCharge ––– 3.0 4.4 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 9.2 37 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS |
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Description similaire - IRFB9N60 |
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