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IRFB9N60 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFB9N60
Description  Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFB9N60 Fiches technique(HTML) 2 Page - International Rectifier

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IRFB9N60A
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.66
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.75
VGS = 10V, ID = 5.5A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.5
–––
–––
S
VDS = 25V, ID = 5.5A
–––
–––
25
µA
VDS = 600V, VGS = 0V
–––
–––
250
VDS = 480V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Qg
Total Gate Charge
–––
–––
49
ID = 9.2A
Qgs
Gate-to-Source Charge
–––
–––
13
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
20
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 300V
tr
Rise Time
–––
25
–––
ID = 9.2A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 9.1Ω
tf
Fall Time
–––
22
–––
RD = 35.5Ω,See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1400 –––
VGS = 0V
Coss
Output Capacitance
–––
180
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
7.1
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
1957 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
49
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
–––
96
–––
VGS = 0V, VDS = 0V to 480V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 6.8mH
RG = 25Ω, IAS = 9.2A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 9.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
530
800
ns
TJ = 25°C, IF = 9.2A
Qrr
Reverse RecoveryCharge
–––
3.0
4.4
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
9.2
37
A
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS


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