IRFB38N20D datasheet(7/11 Pages) IRF

No de pièce	IRFB38N20D

Description	Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

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Fabricant	IRF [International Rectifier]

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IRFB/IRFS/IRFSL38N20D

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7

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

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	IRFR9N20D	126Kb / 10P	Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
	IRFB17N20D	194Kb / 11P	Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)
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IRFB38N20D Fiches technique(PDF) 7 Page - International Rectifier

IRFB38N20D Fiches technique(HTML) 7 Page - International Rectifier

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