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N0300N Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce N0300N
Description  MOS FIELD EFFECT TRANSISTOR
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0300N Fiches technique(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
N0300N
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D19781EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
DESCRIPTION
The N0300N is a switching device which can be driven directly by
a 4.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 50 m
Ω MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 83 m
Ω MAX. (VGS = 4.5 V, ID = 2.0 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
N0300N-T1B-AT
Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: XY
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)
Note1
ID(pulse)
±18
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t
≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
0.95
1.9
2.9 ±0.2
0.95
1. Gate
2. Source
3. Drain
2
1
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain


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