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IRF5210S Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF5210S
Description  Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF5210S Fiches technique(HTML) 2 Page - International Rectifier

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IRF5210S/L
‚ Starting T
J = 25°C, L = 3.1mH
RG = 25Ω, IAS = -21A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ I
SD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF5210 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-100
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.11 –––
V/°C
Reference to 25°C, ID = -1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.06
VGS = -10V, ID = -24A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
10
–––
–––
S
VDS = -50V, ID = -21A
…
–––
–––
-25
µA
VDS = -100V, VGS = 0V
–––
–––
-250
VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
180
ID = -21A
Qgs
Gate-to-Source Charge
–––
–––
25
nC
VDS = -80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
97
VGS = -10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
17
–––
VDD = -50V
tr
Rise Time
–––
86
–––
ID = -21A
td(off)
Turn-Off Delay Time
–––
79
–––
RG = 2.5Ω
tf
Fall Time
–––
81
–––
RD = 2.4Ω, See Fig. 10
„
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
2700 –––
VGS = 0V
Coss
Output Capacitance
–––
790
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
450
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C, IS = -24A, VGS = 0V
„
trr
Reverse Recovery Time
–––
170
260
ns
TJ = 25°C, IF = -21A
Qrr
Reverse Recovery Charge
–––
1.2
1.8
µC
di/dt = -100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
S
D
G
-40
-140


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