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IRF3315L Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF3315L
Description  Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF3315L Fiches technique(HTML) 2 Page - International Rectifier

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IRF3315S/L
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.187 –––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.082
VGS = 10V, ID = 12A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
17
–––
–––
S
VDS = 50V, ID = 12A
…
–––
–––
25
µA
VDS = 150V, VGS = 0V
–––
–––
250
VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
95
ID = 12A
Qgs
Gate-to-Source Charge
–––
–––
11
nC
VDS = 120V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
47
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
9.6
–––
VDD = 75V
tr
Rise Time
–––
32
–––
ID = 12A
td(off)
Turn-Off Delay Time
–––
49
–––
RG = 5.1Ω
tf
Fall Time
–––
38
–––
RD = 5.9Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
1300 –––
VGS = 0V
Coss
Output Capacitance
–––
300
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
160
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
‚ VDD = 25V, starting TJ = 25°C, L = 4.9 mH
RG = 25Ω, IAS = 12A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ I
SD ≤ 12A, di/dt ≤ 140A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF3315 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 43A, VGS = 0V
„
trr
Reverse Recovery Time
–––
174
260
ns
TJ = 25°C, IF = 43A
Qrr
Reverse Recovery Charge
–––
1.2
1.7
µC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
21
84


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