PZT965_15 datasheet(1/2 Pages) SECOS

No de pièce	PZT965

Description	NPN Transistor

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

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PZT965

NP

N Transistor

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

The PZT965 is designed for use as

AF output amplifier and flash unit.

9 6 5

Description

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC= 100µA

IC= 1mA

IE= 10µA

VCB= 60V

VEB=

IC=

VCE= V, IC=

VCE= V, IE= 50mA

VCB= 20 , f=1MHz

*BVCEO

20

-

V

BVEBO

-

V

ICBO

-

0.1

uA

IEBO

-

uA

*VCE(sat)

-

*hFE1

800

*hFE2

fT

-

MH

Cob

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

40

7

230

150

0.1

1

V

7V

3A,IB=0.1A

2

0.5 A

VCE= V, IC=

2

2 A

6

V

C

-

0.35

-

150

o

50

-

*Pulse width 300 s, Duty Cycle 2%

≦

µ

-

MAXIMUM RATINGS

Symbol

Parameter

Value

Collector Current (Continous)

7

2

55~+150

20

40

5

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

ABSOLUTE

Ta=25C

o

Classification of hFE

Rank

R

340~600

Range

Collector Current (Peak PT=10mS)

8

5

1.40

1.80

Mi

llimeter

Mi

llimeter

SOT-223

21-Oct-2009 Rev. B

Page 1 of 2

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

DateCode

B

C

E

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