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PZT965 Fiches technique(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT965 Fiches technique(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual PZT965 NP N Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT965 is designed for use as AF output amplifier and flash unit. 9 6 5 Description ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC= 100µA IC= 1mA IE= 10µA VCB= 60V VEB= IC= VCE= V, IC= VCE= V, IE= 50mA VCB= 20 , f=1MHz *BVCEO 20 - - V BVEBO - - V ICBO - - 0.1 uA IEBO - - uA *VCE(sat) - *hFE1 800 *hFE2 fT - MH Cob - pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t 40 7 230 150 0.1 1 V 7V 3A,IB=0.1A 2 0.5 A VCE= V, IC= 2 2 A 6 V C - 0.35 - 150 o 50 - *Pulse width 300 s, Duty Cycle 2% ≦ ≦ µ - - MAXIMUM RATINGS Symbol Parameter Value Collector Current (Continous) 7 2 55~+150 20 40 5 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V A W Storage Temperature - C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units ABSOLUTE Ta=25C o Classification of hFE Rank R 340~600 Range Collector Current (Peak PT=10mS) 8 5 1.40 1.80 Mi llimeter Mi llimeter SOT-223 21-Oct-2009 Rev. B Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 DateCode B C E |
Numéro de pièce similaire - PZT965_15 |
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Description similaire - PZT965_15 |
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