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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI2337DS-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2337DS-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 6 page  SMD Type www.kexin.com.cn 2 MOSFET P-Channel Enhancement MOSFET SI2337DS (KI2337DS) ■ Electrical Characteristics Ta = 25℃ ■ Marking Marking E7* Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -80 V VDS=-80V, VGS=0V -1 VDS=-80V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -2 -4 V VGS=-10V, ID=-1.2A 216 270 VGS=-6V, ID=-1.1A 242 303 On state drain current *1 ID(ON) VGS=-10V, VDS=-5V -7 A Forward Transconductance *1 gFS VDS=-15V, ID=-1.2A 4.3 S Input Capacitance Ciss 500 Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 25 VGS=-10V, VDS=-40V, ID=-1.2A 11 17 7 11 Gate Source Charge Qgs 2.1 Gate Drain Charge Qgd 3.2 Gate Resistance Rg f=1MHz 4.8 Ω Turn-On DelayTime td(on) 10 15 Turn-On Rise Time tr 15 23 Turn-Off DelayTime td(off) 20 30 Turn-Off Fall Time tf 15 23 Turn-On DelayTime td(on) 15 23 Turn-On Rise Time tr 18 27 Turn-Off DelayTime td(off) 20 30 Turn-Off Fall Time tf 12 18 Body Diode Reverse Recovery Time trr 30 45 Body Diode Reverse Recovery Charge Qrr 45 70 nC Reverse Recovery Fall Time ta 25 Reverse Recovery Rise Time tb 5 Maximum Body-Diode Continuous Current IS TC = 25 °C -2.1 Pulse Diode Forward Current *1 ISM -7 Diode Forward Voltage VSD IS=-0.63A -0.8 -1.2 V ns A Total Gate Charge Qg VGS=-6V, VDS=-40V, ID=-1.2A IF = 0.63 A, di/dt = 100 A/μs, TJ = 25 °C VGS=-10V, VDS=-40V, RL=42Ω,RGEN=1Ω ID=-0.96A ns pF nC VGS=-6V, VDS=-40V, RL=42Ω,RGEN=1Ω ID=-0.96A VGS=0V, VDS=-40V, f=1MHz Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. |
Numéro de pièce similaire - SI2337DS-3 |
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Description similaire - SI2337DS-3 |
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