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SI2319DS-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2319DS-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -40 V VDS=-40V, VGS=0V -1 VDS=-40V, VGS=0V, TJ=55℃ -10 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -3 V VGS=-10V, ID=-3.0A 65 82 VGS=-4.5V, ID=-2.4A 100 130 On state drain current *1 ID(ON) VGS=-10V, VDS=-5V -6 A Forward Transconductance *1 gFS VDS=-5V, ID=-3.0A 7 S Input Capacitance Ciss 470 Output Capacitance Coss 85 Reverse Transfer Capacitance Crss 65 Total Gate Charge Qg 11.3 17 Gate Source Charge Qgs 1.7 Gate Drain Charge Qgd 3.3 Turn-On DelayTime td(on) 7 15 Turn-On Rise Time tr 15 25 Turn-Off DelayTime td(off) 25 40 Turn-Off Fall Time tf 25 40 Maximum Body-Diode Continuous Current IS -1.25 A Diode Forward Voltage VSD IS=-1.25 A,VGS=0V -0.8 -1.2 V pF nC VGS=-4.5V, VDS=-20V, RL=20Ω,RGEN=6Ω ID=-1.0A ns Zero Gate Voltage Drain Current IDSS μ A mΩ RDS(On) Static Drain-Source On-Resistance *1 VGS=0V, VDS=-20V, f=1MHz VGS=-10V, VDS=-20V, ID=-3A *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking C9* |
Numéro de pièce similaire - SI2319DS-3 |
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Description similaire - SI2319DS-3 |
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