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IRFP244 Fiches technique(PDF) 3 Page - Intersil Corporation |
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IRFP244 Fiches technique(HTML) 3 Page - Intersil Corporation |
3 / 7 page 5-3 IRFP244, IRFP245, IRFP246, IRFP247 Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 - pF Output Capacitance COSS - 320 - pF Reverse Transfer Capacitance CRSS -69 - pF Internal Drain Inductance LD Measured fRom the Drain Lead, 6mm (0.25in) From Pack- age to the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 5.0 - nH Internal Source Inductance LS Measured from The Source Lead, 6mm (0.25in) from the Header to the Source Bonding Pad - 12.5 - nH Junction to Case RθJC - - 0.83 oC/W Junction to Ambient RθJA Free Air Operation - - 30 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode - - 15 A Pulse Source to Drain Current (Note 3) ISDM - - 60 A Source to Drain Diode Voltage (Note 2) VSD TJ = 25 oC, I SD = 15A, VGS = 0V (Figure 13) - - 1.8 V Reverse Recovery Time trr TJ = 25 oC, I SD = 14A, dISD/dt = 100A/µs 150 300 640 ns Reverse Recovered Charge QRR TJ = 25 oC, I SD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25 oC, L = 4.0µH, RG = 25Ω, peak IAS = 15A. See Figures 15, 16. Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LS LD G D S G D S |
Numéro de pièce similaire - IRFP244 |
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Description similaire - IRFP244 |
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