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SI2305DS-HF-3 Fiches technique(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce SI2305DS-HF-3
Description  P-Channel MOSFET
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2305DS-HF-3 Fiches technique(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2305DS-HF-3 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2305DS-HF-3 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2305DS-HF-3 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2305DS-HF-3 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
2
SMD Type
www.kexin.com.cn
MOSFET
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditions
Min
Typ
Max
Unit
Drain-source breakdown voltage
VDSS
VGS = 0 V, ID = -250μA
-8
V
Gate threshold voltage
VGS(th) VDS = VGS, ID = -250 μA
-0.45
V
VDS = -6.4 V, VGS = 0 V
-1
VDS = -6.4 V, VGS = 0 V, TJ = 55 ℃
-10
Gate-body leakage
IGSS
VDS = 0 V, VGS = ±8 V
±
100
nA
VGS = -4.5 V, ID = -3.5 A
0.052
VGS = -2.5 V, ID = -3.0 A
0.071
VGS = -1.8 V, ID = -2.0 A
0.108
VDS ≤ -5 V, VGS = -4.5 V
-6
VDS ≤ -5 V, VGS = -2.5 V
-3
Forward transconductance
gfs
VDS = -5 V, ID = -3.5 A
8.5
S
Input capacitance *
Ciss
1245
Output capacitance *
Coss
375
Reverse transfer capacitance *
Crss
210
Total gate charge *
Qg
10
15
Gate-source charge *
Qgs
2
Gate-drain charge *
Qgd
2
Turn-on Delay time
td(on)
13
20
Turn-on Reise time
tr
25
40
Turn-off Dealy time
td(off)
55
80
Turn-off Fall time
tf
19
35
Continuous source current (diode conduction) *
IS
-1.6
A
Diode forward voltage
VSD
IS = -1.6 A, VGS = 0 V
-1.2
V
* Pulse test: PW ≤ 300 μs duty cycle ≤ 2%.
On-state drain current
ID(on)
Zero gate voltage drain current
IDSS
μA
Drain-source on-state resistance
rDS(on)
Ω
A
ns
VDS = -4V ,VGS = -4.5 V , ID= -3.5 A
VDS = -4V ,VGS = 0 , f = 1 MHz
VDD = -4V , RL = 4Ω ,
ID = -1A , VGEN =- 4.5V , RG = 6Ω
pF
nC
Marking
Marking
A5* F
-0.8
P-Channel MOSFET
SI2305DS-HF (KI2305DS-HF)


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