SI2301BDS datasheet(4/5 Pages) KEXIN

No de pièce	SI2301BDS

Description	P-Channel Enhancement MOSFET

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

.

P-Channel Enhancement MOSFET

SI2301BDS (KI2301BDS)

■

Typical Characterisitics

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0

1

2

3

4

5

- 0.2

- 0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

0

25

50

75

100

125

150

T J = 150 C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power

Square Wave Pulse Duration (sec)

VSD

V

)

V

(

e

g

a

tl

o

V

n

i

a

r

D

-

o

t-

e

c

r

u

o

S

-

GS - Gate-to-Source Voltage (V)

T J

- Temperature (

)

c

e

s

(

e

m

i

T

)

C

ID = 2.8 A

ID = 250 A

10

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

T J = 25 C

1

TA = 25 C

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

0.1

10 s

100 s

1 ms

10 ms

100 ms

TA = 25 C

Single Pulse

10

8

6

4

2

0

0.01

0.1

1

10

100

1000

dc, 100 s, 10 s, 1 s

Numéro de pièce similaire - SI2301BDS

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI2301BDS	59Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI2301BDS	93Kb / 6P	P-Channel 2.5-V (G-S) MOSFET Rev. D, 03-Mar-08
	SI2301BDS	213Kb / 9P	P-Channel 2.5 V (G-S) MOSFET Rev. F, 17-Oct-11
	SI2301BDS	213Kb / 9P	P-Channel 2.5 V (G-S) MOSFET Rev. F, 17-Oct-11
	SI2301BDS	180Kb / 8P	P-Channel 2.5 V (G-S) MOSFET 01-Jan-2022

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SI2301BDS Fiches technique(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

SI2301BDS Fiches technique(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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