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IRFD120 Fiches technique(PDF) 1 Page - Intersil Corporation |
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IRFD120 Fiches technique(HTML) 1 Page - Intersil Corporation |
1 / 6 page 4-275 File Number 2315.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD120 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17401. Features • 1.3A, 100V •rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging HEXDIP Ordering Information PART NUMBER PACKAGE BRAND IRFD120 HEXDIP IRFD120 NOTE: When ordering, use the entire part number. G D S SOURCE GATE DRAIN Data Sheet July 1999 |
Numéro de pièce similaire - IRFD120 |
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Description similaire - IRFD120 |
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